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Author Sinha, O. P.
Source United States Department of Energy Office of Scientific and Technical Information
Content type Text
Language English
Subject Keyword CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY ♦ ARGON IONS ♦ GALLIUM ANTIMONIDES ♦ INDIUM ARSENIDES ♦ INDIUM PHOSPHIDES ♦ IRRADIATION ♦ KEV RANGE 01-10 ♦ MODIFICATIONS ♦ QUANTUM DOTS ♦ ROUGHNESS ♦ SCANNING TUNNELING MICROSCOPY ♦ SEMICONDUCTOR MATERIALS ♦ SURFACES ♦ TAIL IONS ♦ TEMPERATURE RANGE 0273-0400 K ♦ TUNNEL EFFECT ♦ WAVELENGTHS
Abstract Compound semiconductors (InP, InAs and GaSb) has been exposed to energetic 3 keV Ar{sup +} ions for a varying fluence range of 10{sup 13} ions/cm{sup 2} to 10{sup 18} ions/cm{sup 2} at room temperature. Morphological modifications of the irradiated surfaces have been investigated by Scanning Tunneling Microscopy (STM) in UHV conditions. It is observed that InP and GaSb have fluence dependent nanopattering e.g. nanoneedle, aligned nanodots, superimposed nanodots ripple like structures while InAs has little fluence dependent behaviour indicating materials dependent growth of features on irradiated surfaces. Moreover, surface roughness and wavelength of the features are also depending on the materials and fluences. The RMS surface roughness has been found to be increased rapidly in the early stage of irradiation followed by slower escalate rate and later tends to saturate indicating influence of the nonlinear processes.
ISSN 0094243X
Educational Use Research
Learning Resource Type Article
Publisher Date 2016-05-23
Publisher Place United States
Volume Number 1731
Issue Number 1


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