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Author Sieger, M. T. ♦ Schenter, G. K. ♦ Orlando, T. M.
Source United States Department of Energy Office of Scientific and Technical Information
Content type Text
Language English
Subject Keyword PHYSICS ♦ CHEMISTRY ♦ SILICON ♦ CHLORINE ♦ SURFACE TREATMENTS ♦ DESORPTION ♦ ELECTRON BEAMS ♦ FINE STRUCTURE ♦ SCATTERING ♦ INTERFERENCE ♦ STANDING WAVES ♦ ELECTRONIC STRUCTURE ♦ EXCITATION
Abstract The total electron-stimulated desorption yield of Cl{sup +} ions from the Cl-terminated Si(111) surface is shown to exhibit fine-structure oscillations as a function of incident electron beam direction. We demonstrate that this fine structure is consistent with quantum-mechanical scattering and interference of the incident electron. Comparison of experimental data to a qualitative theory reveals the site of the excitation responsible for desorption, and the ground-state atomic bonding geometry of the desorbate. The data are consistent with desorption initiated by an excitation localized on the Si atom bonded to Cl. {copyright} {ital 1999} {ital The American Physical Society}
ISSN 00319007
Educational Use Research
Learning Resource Type Article
Publisher Date 1999-04-01
Publisher Department Pacific Northwest National Laboratory
Publisher Place United States
Journal Physical Review Letters
Volume Number 82
Issue Number 16
Organization Pacific Northwest National Laboratory


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