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Author Zhang, T. ♦ Lee, S. ♦ Guido, L. J. ♦ Hsueh, C.
Source United States Department of Energy Office of Scientific and Technical Information
Content type Text
Language English
Subject Keyword PHYSICS ♦ STRESS ANALYSIS ♦ INTERFACES ♦ THIN FILMS ♦ EPITAXY ♦ DISLOCATIONS ♦ THICKNESS ♦ SUBSTRATES ♦ FOURIER TRANSFORMATION ♦ SEMICONDUCTOR MATERIALS ♦ STRESSES
Abstract The critical epilayer thickness for the formation of misfit dislocations at the interface between an epilayer and a substrate with a finite thickness is derived in the present study. The analysis is based on the energy approach, in which the self-energy of dislocation, the interaction energy between the dislocation and free surfaces, and the lattice mismatch energy of substrate and epilayer are calculated. To satisfy the free surface condition, the methodology of superposition principle and Fourier transformation are used in analyzing the stress field due to the interface dislocation. The critical epilayer thickness is compared with those reported in the literature. {copyright} {ital 1999 American Institute of Physics.}
ISSN 00218979
Educational Use Research
Learning Resource Type Article
Publisher Date 1999-06-01
Publisher Place United States
Journal Journal of Applied Physics
Volume Number 85
Issue Number 11


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