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Author Lee, S. R. ♦ Wright, A. F. ♦ Crawford, M. H. ♦ Petersen, G. A. ♦ Han, J. ♦ Biefeld, R. M.
Source United States Department of Energy Office of Scientific and Technical Information
Content type Text
Language English
Subject Keyword MATERIALS SCIENCE ♦ ALUMINIUM COMPOUNDS ♦ GALLIUM COMPOUNDS ♦ ALUMINIUM NITRIDES ♦ GALLIUM NITRIDES ♦ ENERGY GAP ♦ SEMICONDUCTOR MATERIALS ♦ CHEMICAL VAPOR DEPOSITION ♦ PHOTOLUMINESCENCE ♦ TEMPERATURE DEPENDENCE ♦ STRAINS ♦ LATTICE PARAMETERS ♦ X-RAY DIFFRACTION
Abstract The band gap of Al{sub x}Ga{sub 1{minus}x}N is measured for the composition range 0{le}x{lt}0.45; the resulting bowing parameter, b=+0.69&hthinsp;eV, is compared to 20 previous works. A correlation is found between the measured band gaps and the methods used for epitaxial growth of the Al{sub x}Ga{sub 1{minus}x}N: directly nucleated or buffered growths of Al{sub x}Ga{sub 1{minus}x}N initiated on sapphire at temperatures T{gt}800&hthinsp;{degree}C usually lead to stronger apparent bowing (b{gt}+1.3&hthinsp;eV); while growths initiated using low-temperature buffers on sapphire, followed by high-temperature growth, lead to weaker bowing (b{lt}+1.3&hthinsp;eV). Extant data suggest that the intrinsic band-gap bowing parameter for AlGaN alloys is b=+0.62({plus_minus}0.45)&hthinsp;eV. {copyright} {ital 1999 American Institute of Physics.}
ISSN 00036951
Educational Use Research
Learning Resource Type Article
Publisher Date 1999-05-01
Publisher Place United States
Journal Applied Physics Letters
Volume Number 74
Issue Number 22


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