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Author Dlubak, B. ♦ Seneor, P. ♦ Anane, A. ♦ Barraud, C. ♦ Deranlot, C. ♦ Deneuve, D. ♦ Mattana, R. ♦ Petroff, F. ♦ Fert, A. ♦ Servet, B.
Source United States Department of Energy Office of Scientific and Technical Information
Content type Text
Language English
Subject Keyword MATERIALS SCIENCE ♦ CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY ♦ ALUMINIUM OXIDES ♦ AMORPHOUS STATE ♦ CRYSTAL GROWTH ♦ CRYSTAL STRUCTURE ♦ DEPOSITION ♦ EFFICIENCY ♦ FULLERENES ♦ LAYERS ♦ MAGNESIUM OXIDES ♦ RAMAN SPECTRA ♦ RAMAN SPECTROSCOPY ♦ SPIN ♦ SPUTTERING ♦ TUNNEL EFFECT ♦ ALKALINE EARTH METAL COMPOUNDS ♦ ALUMINIUM COMPOUNDS ♦ ANGULAR MOMENTUM ♦ CARBON ♦ CHALCOGENIDES ♦ ELEMENTS ♦ LASER SPECTROSCOPY ♦ MAGNESIUM COMPOUNDS ♦ NONMETALS ♦ OXIDES ♦ OXYGEN COMPOUNDS ♦ PARTICLE PROPERTIES ♦ SPECTRA ♦ SPECTROSCOPY
Abstract We report on the structural impact on graphene and multi-layers graphene of the growth by sputtering of tunnel barriers. Sputtered Al{sub 2}O{sub 3} and MgO barriers were chosen for their well-known efficiency as spin injectors in spintronics devices. The impact of the growth on the structure of graphene and up to 4-layer flakes was analyzed by Raman spectroscopy. This study reveals that for Al{sub 2}O{sub 3} growth, the impact is moderate for a monolayer and decreases sharply for bilayers and above. In the case of MgO all the flakes underwent a strong amorphization. Moreover, this reveals that while single layer graphene is believed to offer the best spin transport properties, the better robustness of multilayer graphene may ultimately make it a better choice for spintronics devices.
ISSN 00036951
Educational Use Research
Learning Resource Type Article
Publisher Date 2010-08-30
Publisher Place United States
Journal Applied Physics Letters
Volume Number 97
Issue Number 9


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