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Author Azlan, Hamzah Azrul ♦ Muhammad, Sutan Norsuzailina ♦ Marini, Sawawi ♦ Atiqah, Abdul Halim Nurul ♦ Kudnie, Sahari Siti ♦ Kuryati, Kipli ♦ Fathi, Nik Zaini Fathi Nik Amni ♦ Muhammad, Kashif ♦ Yeop, Majlis Burhanuddin ♦ Rohana, Sapawi ♦ Masniah, Wan Masra Sharifah ♦ Nazreen, Junaidi
Source Directory of Open Access Journals (DOAJ)
Content type Text
Publisher EDP Sciences
File Format PDF
Date Created 2017-08-09
Copyright Year ©2017
Language English ♦ French
Subject Domain (in LCC) TA1-2040
Subject Keyword Engineering (General) ♦ Technology ♦ Civil engineering (General)
Abstract The different cleaning solution; HCl and HF solution are used to remove the suboxide and oxide component on Ge surface. The HCl cleaning results chlorine (Cl) termination on Ge surface whereas no Fluorine (F) termination was observed just after HF cleaning. The growth of Ge oxide is studied after treated with HCl cleaning on two surface orientations; (100) and (111), respectively in dry oxygen ambient and cleanroom air by spectroscopic ellipsometry (SE) and x-ray photoelectron spectroscopy (XPS). A clear step and terrace trend was observed for the oxidation growth of Ge (100) and Ge (111) in dry oxygen ambient compared to in clean room air. This trend shows the difference in surface reaction of Ge oxidation as humidity varies. The stability of chlorine termination of Ge (111) than Ge (100) explains the slower growth of oxidation in dry oxygen ambient.
ISSN 2261236X
Age Range 18 to 22 years ♦ above 22 year
Educational Use Research
Education Level UG and PG ♦ Career/Technical Study
Learning Resource Type Article
Publisher Date 2017-01-01
e-ISSN 2261236X
Journal MATEC Web of Conferences
Volume Number 87
Starting Page 05005

Source: Directory of Open Access Journals (DOAJ)