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Author Amy, F. ♦ Enriquez, H. ♦ Soukiassian, P. ♦ Brylinski, C. ♦ Mayne, A. ♦ Dujardin, G.
Sponsorship (US)
Source United States Department of Energy Office of Scientific and Technical Information
Content type Text
Publisher The American Physical Society
Language English
Subject Keyword CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS ♦ ANNEALING ♦ DEPOSITION ♦ DIMERS ♦ ORIGIN ♦ OXIDATION ♦ OXYGEN ♦ PHYSICS ♦ SCANNING TUNNELING MICROSCOPY ♦ SILICON CARBIDES ♦ THIN FILMS
Abstract We investigate Si deposition on the 6H--SiC(0001) 3 x 3 surface reconstruction by atom-resolved scanning tunneling microscopy. Upon thermal annealing, the Si thin film forms an unexpected structure having dimer rows in a cubic 4 x 3 surface array. Such a 4 x 3 Si phase has a very open surface very likely being at the origin of the exceptionally high reactivity to oxygen of the Si/6H--SiC(0001) system. These findings are relevant in silicon carbide oxidation. {copyright} 2001 American Institute of Physics.
ISSN 00036951
Educational Use Research
Learning Resource Type Article
Publisher Date 2001-08-06
Publisher Place United States
Journal Applied Physics Letters
Volume Number 79
Issue Number 6


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