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Author Zakharov, A. G. ♦ Dudko, V. G. ♦ Nabokov, G. M. ♦ Sechenov, D. A.
Source United States Department of Energy Office of Scientific and Technical Information
Content type Text
Language English
Subject Keyword MATERIALS SCIENCE ♦ P-N JUNCTIONS ♦ ELECTRICAL PROPERTIES ♦ SILICON ♦ DISLOCATIONS ♦ BORON ♦ CARRIER LIFETIME ♦ CHARGE CARRIERS ♦ DEEP LEVEL TRANSIENT SPECTROSCOPY ♦ DIFFUSION ♦ ELECTRIC CONDUCTIVITY ♦ ENERGY GAP ♦ N-TYPE CONDUCTORS ♦ RECOMBINATION ♦ THIN FILMS ♦ TRAPPING ♦ CRYSTAL DEFECTS ♦ CRYSTAL STRUCTURE ♦ ELEMENTS ♦ FILMS ♦ JUNCTIONS ♦ LIFETIME ♦ LINE DEFECTS ♦ MATERIALS ♦ PHYSICAL PROPERTIES ♦ SEMICONDUCTOR JUNCTIONS ♦ SEMICONDUCTOR MATERIALS ♦ SEMIMETALS ♦ SPECTROSCOPY ♦ Other Materials- Structure & Phase Studies ♦ Materials- Properties
Abstract We present the results of studies on the influence of deep levels, due to dislocations in electronic-grade silicon, on the lifetime of minority carriers and on the current-voltage and capacitance-voltage characteristics of p-n junctions. The parameters of the deep levels were determined by means of dynamic spectroscopy. The carrier lifetime in the high-resistance region of the p-n junction correlates well with the dislocation density and varies from 10/sup /minus/7/ sec to 3 /centered dot/10/sup /minus/6/ sec when the dislocation density N/sub d/ varies from 10/sup 7/ cm/sup /minus/2/ to 5 /centered dot/10/sup 3/ cm/sup /minus/2/. The voltage across the p-n junction at a high level of injection varies 1.6 to 6.2 v as a function of N/sub d/. The ionization energy of deep levels associated with dislocation in silicon is 0.44 and 0.57 eV, measured from the bottom of the conduction band.
Educational Use Research
Learning Resource Type Article
Publisher Date 1988-07-01
Publisher Place United States
Journal Sov. Phys. J.
Volume Number 31
Issue Number 1
Organization V.D. Kalmykov Radio Engineering Institute, Taganrov (USSR)


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