Thumbnail
Access Restriction
Open

Author Pei, Tengfei ♦ Bao, Lihong ♦ Wang, Guocai ♦ Ma, Ruisong ♦ Yang, Haifang ♦ Li, Junjie ♦ Gu, Changzhi ♦ Du, Shixuan ♦ Gao, Hong-jun ♦ Pantelides, Sokrates
Source United States Department of Energy Office of Scientific and Technical Information
Content type Text
Language English
Subject Keyword INORGANIC, ORGANIC, PHYSICAL AND ANALYTICAL CHEMISTRY ♦ CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS ♦ CURRENTS ♦ ELECTROLYTES ♦ ELECTRON DENSITY ♦ FIELD EFFECT TRANSISTORS ♦ HAFNIUM OXIDES ♦ LAYERS ♦ POLYMERS ♦ SILICA ♦ SILICON OXIDES ♦ TIN SELENIDES ♦ TWO-DIMENSIONAL SYSTEMS
Abstract We report few-layer SnSe{sub 2} field effect transistors (FETs) with high current on/off ratios. By trying different gate configurations, 300 nm SiO{sub 2} and 70 nm HfO{sub 2} as back gate only and 70 nm HfO{sub 2} as back gate combined with a top capping layer of polymer electrolyte, few-layer SnSe{sub 2} FET with a current on/off ratio of 10{sup 4} can be obtained. This provides a reliable solution for electrically modulating quasi-two-dimensional materials with high electron density (over 10{sup 13} cm{sup −2}) for field-effect transistor applications.
ISSN 00036951
Educational Use Research
Learning Resource Type Article
Publisher Date 2016-02-01
Publisher Place United States
Journal Applied Physics Letters
Volume Number 108
Issue Number 5


Open content in new tab

   Open content in new tab