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Author Wang, X. ♦ Tsybeskov, L. ♦ Kamins, T. I. ♦ Wu, X. ♦ Lockwood, D. J.
Source United States Department of Energy Office of Scientific and Technical Information
Content type Text
Language English
Subject Keyword CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY ♦ CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS ♦ CRYSTAL DEFECTS ♦ CRYSTAL GROWTH ♦ GERMANIUM ♦ GERMANIUM SILICIDES ♦ HETEROJUNCTIONS ♦ LASER RADIATION ♦ NANOWIRES ♦ OPTICAL PROPERTIES ♦ PHOTOLUMINESCENCE ♦ RAMAN EFFECT ♦ SILICON ♦ STRAINS ♦ STRESSES ♦ THERMAL CONDUCTIVITY ♦ THERMAL EXPANSION
Abstract Detailed studies of the structural and optical properties of axial silicon-germanium nanowire heterojunctions show that despite the 4.2% lattice mismatch between Si and Ge they can be grown without a significant density of structural defects. The lattice mismatch induced strain is partially relieved due to spontaneous SiGe intermixing at the heterointerface during growth and lateral expansion of the Ge segment of the nanowire. The mismatch in Ge and Si coefficients of thermal expansion and low thermal conductivity of Si/Ge nanowire heterojunctions are proposed to be responsible for the thermally induced stress detected under intense laser radiation in photoluminescence and Raman scattering measurements.
ISSN 00218979
Educational Use Research
Learning Resource Type Article
Publisher Date 2015-12-21
Publisher Place United States
Journal Journal of Applied Physics
Volume Number 118
Issue Number 23


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