Thumbnail
Access Restriction
Open

Author Sa de Melo, C. A.
Source United States Department of Energy Office of Scientific and Technical Information
Content type Text
Language English
Subject Keyword MATERIALS SCIENCE ♦ PHYSICS ♦ TUNNELING ♦ DOMAIN STRUCTURE ♦ FERROELECTRIC MATERIALS ♦ FLUCTUATIONS ♦ POLARIZATION ♦ GRAINS
Abstract At the mesoscopic level a single domain of a classical permanent memory may experience considerable quantum fluctuations due to tunneling between two possible memory states, thus destroying the classical permanent memory effect. To study these quantum effects, the concrete example of a mesoscopic uniaxial ferroelectric grain is discussed, where the orientation of the electric polarization determines two possible memory states. To determine the degree of memory loss, the tunneling rate between the two polarization states is calculated at zero temperature, both in the absence and in the presence of an external static electric field. Environmental effects (phonons, defects, and surfaces) are also considered. {copyright} {ital 1996 The American Physical Society.}
ISSN 01631829
Educational Use Research
Learning Resource Type Article
Publisher Date 1996-03-01
Publisher Department Argonne National Laboratory (ANL), Argonne, IL
Publisher Place United States
Journal Physical Review, B: Condensed Matter
Volume Number 53
Issue Number 11
Organization Argonne National Laboratory (ANL), Argonne, IL


Open content in new tab

   Open content in new tab