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Author Wetzel, C. ♦ Haller, E. E. ♦ Amano, H. ♦ Akasaki, I.
Source United States Department of Energy Office of Scientific and Technical Information
Content type Text
Language English
Subject Keyword MATERIALS SCIENCE ♦ GALLIUM NITRIDES ♦ INFRARED SPECTRA ♦ ALUMINIUM NITRIDES ♦ THIN FILMS ♦ REFLECTIVITY ♦ PHONONS ♦ RAMAN SPECTRA ♦ SPECTROSCOPY ♦ REFLECTION SPECTROSCOPY
Abstract Infrared reflection spectroscopy is applied to state-of-the-art thin film heterostructures of group-III nitrides on sapphire and Si substrates. The individual layers of GaN and AlGaN and the AlN buffer layer are identified by their phonon frequencies. Under non-perpendicular incidence of the light, A{sub 1}(LO) phonon modes are observed in the wurtzite system. The presence of the very thin AlN buffer layer manifests itself in clear features of the AlN phonons. The A{sub 1}(LO) phonon mode energy is determined in Al{sub {ital x}}Ga{sub 1{minus}{ital x}}N for {ital x}{approx_equal}0.15. Raman spectra confirm our findings. {copyright} {ital 1996 American Institute of Physics.}
ISSN 00036951
Educational Use Research
Learning Resource Type Article
Publisher Date 1996-04-01
Publisher Department Lawrence Berkeley National Laboratory
Publisher Place United States
Journal Applied Physics Letters
Volume Number 68
Issue Number 18
Organization Lawrence Berkeley National Laboratory


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