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Author Chow, W. ♦ Kira, M. ♦ Koch, S. W.
Source United States Department of Energy Office of Scientific and Technical Information
Content type Text
Language English
Subject Keyword MATERIALS SCIENCE ♦ ENGINEERING NOT INCLUDED IN OTHER CATEGORIES ♦ GALLIUM COMPOUNDS ♦ INDIUM COMPOUNDS ♦ EXCITONS ♦ GALLIUM NITRIDES ♦ INDIUM NITRIDES ♦ PHOTOLUMINESCENCE ♦ ABSORPTION SPECTRA ♦ SEMICONDUCTOR LASERS ♦ GAIN ♦ EMISSION SPECTRA ♦ ELECTRONIC STRUCTURE ♦ NONLINEAR OPTICS
Abstract Microscopic calculations of the absorption and luminescence spectra are presented for wide bandgap Ga{sub 1{minus}x}In{sub x}N/GaN quantum well systems. Whereas structures with narrow well widths exhibit the usual excitation-dependent bleaching of the exciton resonance without shifting spectral position, a significant blueshift of the exciton peak is obtained for wider quantum wells. This blueshift, which is also present in the excitation-dependent luminescence spectra, is attributed to the interplay between the screening of a strain induced piezoelectric field and the density dependence of many-body Coulomb effects. The calculations also show an over two orders of magnitude increase in the spontaneous electron-hole-pair lifetime with well width, due to the reduction of the electron-hole wave function overlap in the wider wells. The resulting decrease in spontaneous emission loss is predicted to lead to improved threshold properties in wide quantum well lasers. {copyright} {ital 1999} {ital The American Physical Society}
ISSN 01631829
Educational Use Research
Learning Resource Type Article
Publisher Date 1999-07-01
Publisher Place United States
Journal Physical Review, B: Condensed Matter
Volume Number 60
Issue Number 3


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