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Author Vispute, R. D. ♦ Narayan, J. ♦ Dovidenko, K. ♦ Jagannadham, K. ♦ Parikh, N. ♦ Suvkhanov, A. ♦ Budai, J. D.
Source United States Department of Energy Office of Scientific and Technical Information
Content type Text
Language English
Subject Keyword MATERIALS SCIENCE ♦ STRONTIUM COMPOUNDS ♦ EPITAXY ♦ TITANATES ♦ TITANIUM NITRIDES ♦ STRONTIUM TITANATES ♦ HETEROJUNCTIONS ♦ ABLATION ♦ LASER RADIATION ♦ DIELECTRIC PROPERTIES ♦ ELECTRIC CONDUCTIVITY ♦ ION CHANNELING ♦ HETEROSTRUCTURES ♦ EPITAXIAL LAYERS ♦ DIELECTRIC FUNCTION
Abstract High-quality ceramics based heteroepitaxial structures of oxide-nitride-semiconductors, i.e., SrTiO{sub 3}/TiN/Si(100) have been fabricated by {ital in} {ital situ} pulsed laser deposition. The dependence of substrate temperature and oxygen partial pressure on the crystalline quality of the SrTiO{sub 3} films on Si with epitaxial TiN template has been examined. We found that epitaxial growth occurs on TiN/Si(100) above 500{degree}C, initially at a reduced O{sub 2} pressure (10{sup {minus}6} Torr), and followed by a deposition in the range of 5{endash}10{times}10{sup {minus}4} Torr. X-ray diffraction ({Theta}, {omega}, and {Phi} scans) and transmission electron microscope (TEM) results revealed an excellent alignment of SrTiO{sub 3} and TiN films on Si(100) with a cube-on-cube epitaxy. Rutherford backscattering and ion channeling results show a channeling minimum yield ({chi}{sub min}) of {approximately}13{percent} for the SrTiO{sub 3} films. High-resolution TEM results on the SrTiO{sub 3}/TiN interface show that the epitaxial SrTiO{sub 3} film is separated from the TiN by an uniform 80{endash}90 A crystalline interposing layer presumably of TiN{sub {ital x}}O{sub 1{minus}{ital x}} (oxy-nitride). The SrTiO{sub 3} film fabricated at 700{degree}C showed a high relative dielectric constant of 312 at the frequency of 1 MHz. The electrical resistivity and the breakdown field of the SrTiO{sub 3} films were more than 5{times}10{sup 12} {Omega}cm and 6{times}10{sup 5} Vcm{sup {minus}1}, respectively. An estimated leakage current density measured at an electric field of 5{times}10{sup 5} V/cm{sup {minus}1} was less than 10{sup {minus}7} A/cm{sup 2}. {copyright} {ital 1996 American Institute of Physics.}
ISSN 00218979
Educational Use Research
Learning Resource Type Article
Publisher Date 1996-12-01
Publisher Place United States
Journal Journal of Applied Physics
Volume Number 80
Issue Number 12


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