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Author Eser, E. ♦ Hegedus, S. S. ♦ Buchanan, W. A.
Sponsorship USDOE
Source United States Department of Energy Office of Scientific and Technical Information
Content type Text
Language English
Subject Keyword MATERIALS SCIENCE ♦ SOLAR ENERGY ♦ SILICON COMPOUNDS ♦ CARBON COMPOUNDS ♦ ELECTRIC CONDUCTIVITY ♦ SOLAR CELLS ♦ SILICON CARBIDES ♦ THIN FILMS ♦ P-TYPE CONDUCTORS ♦ CHEMICAL VAPOR DEPOSITION ♦ MICROSTRUCTURE ♦ CHEMICAL BONDS ♦ VISIBLE SPECTRA
Abstract We present initial results of a study whose goal is to develop a process leading to SiC p-layers compatible with a superstrate p-i-n cell structure, deposited in an RF PECVD system. Experimental variables were dopant gas, CH{sub 4} and H{sub 2} gas flows normalized to the sum of SiH{sub 4} and CH{sub 4} flows, and the power. Compared to B{sub 2}H{sub 6}, doping with B(CH{sub 3}){sub 3} lowered the conductivity by a factor of 40 and reduced the fraction of crystallinity from 87{percent} to 53{percent}. The c-Si fraction decreased strongly with increasing CH{sub 4} flow. No evidence of Si-C bonding was identified in the Raman spectra of these samples. Finally, it has been demonstrated that high conductivity p-layers ({gt}1 S/cm) having high c-Si volume fraction ({approximately}85{percent}) can be deposited on glass at low power density (84 mW/cm{sup 2}) which is compatible with deposition on TCO substrates for device fabrication. {copyright} {ital 1999 American Institute of Physics.}
ISSN 0094243X
Educational Use Research
Learning Resource Type Article
Publisher Date 1999-03-01
Publisher Place United States
Volume Number 462
Issue Number 1
Technical Publication No. CONF-980935-


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