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Author Timm, R. ♦ Fian, A. ♦ Hjort, M. ♦ Thelander, C. ♦ Lind, E. ♦ Andersen, J. N. ♦ Wernersson, L. -E. ♦ Mikkelsen, A.
Source United States Department of Energy Office of Scientific and Technical Information
Content type Text
Language English
Subject Keyword MATERIALS SCIENCE ♦ CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY ♦ ALUMINIUM OXIDES ♦ DEPOSITION ♦ DIELECTRIC MATERIALS ♦ HAFNIUM OXIDES ♦ INDIUM ARSENIDES ♦ INTERFACES ♦ LAYERS ♦ OXIDATION ♦ PHOTOEMISSION ♦ REDUCTION ♦ SEMICONDUCTOR DEVICES ♦ SEMICONDUCTOR MATERIALS ♦ THIN FILMS ♦ X-RAY PHOTOELECTRON SPECTROSCOPY ♦ ALUMINIUM COMPOUNDS ♦ ARSENIC COMPOUNDS ♦ ARSENIDES ♦ CHALCOGENIDES ♦ CHEMICAL REACTIONS ♦ ELECTRON SPECTROSCOPY ♦ EMISSION ♦ FILMS ♦ HAFNIUM COMPOUNDS ♦ INDIUM COMPOUNDS ♦ MATERIALS ♦ OXIDES ♦ OXYGEN COMPOUNDS ♦ PHOTOELECTRON SPECTROSCOPY ♦ PNICTIDES ♦ REFRACTORY METAL COMPOUNDS ♦ SECONDARY EMISSION ♦ SPECTROSCOPY ♦ TRANSITION ELEMENT COMPOUNDS
Abstract Thin high-{kappa} oxide films on InAs, formed by atomic layer deposition, are the key to achieve high-speed metal-oxide-semiconductor devices. We have studied the native oxide and the interface between InAs and 2 nm thick Al{sub 2}O{sub 3} or HfO{sub 2} layers using synchrotron x-ray photoemission spectroscopy. Both films lead to a strong oxide reduction, obtaining less than 10% of the native As-oxides and between 10% and 50% of the native In-oxides, depending on the deposition temperature. The ratio of native In- to As-oxides is determined to be 2:1. The exact composition and the influence of different oxidation states and suboxides is discussed in detail.
ISSN 00036951
Educational Use Research
Learning Resource Type Article
Publisher Date 2010-09-27
Publisher Place United States
Journal Applied Physics Letters
Volume Number 97
Issue Number 13


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