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Author Chao, Y. ♦ Stagarescu, C. B. ♦ Downes, J. E. ♦ Ryan, P. ♦ Smith, K. E. ♦ Hanser, D. ♦ Bremser, M. D. ♦ Davis, R. F.
Source United States Department of Energy Office of Scientific and Technical Information
Content type Text
Language English
Subject Keyword MATERIALS SCIENCE ♦ GALLIUM COMPOUNDS ♦ SILICON ♦ GALLIUM NITRIDES ♦ ELECTRONIC STRUCTURE ♦ SURFACES ♦ PHOTOEMISSION ♦ SYNCHROTRON RADIATION ♦ BRILLOUIN ZONES
Abstract The electronic structure of {ital n}-type, Si-doped, wurtzite GaN(0001)1{times}1 surfaces has been studied using synchrotron radiation excited angle-resolved photoemission. The GaN thin films were grown by metal-organic chemical-vapor deposition on SiC. Two previously unobserved surface bands were measured and fully characterized. One of the states is highly nonlocalized, dispersing throughout much of the valence band along the {bar {Gamma}}-{bar K}-{bar M}and {bar {Gamma}}-{bar M} directions of the 1{times}1 surface Brillouin zone. The identification of these states as surface bands was confirmed both by their lack of dispersion perpendicular to the surface, and by the sensitivity of the states to hydrogen adsorption. The symmetry properties of the states were determined using the linear polarization of the incident synchrotron radiation. These states are quite distant from the localized nondispersive surface state previously observed on GaN. {copyright} {ital 1999} {ital The American Physical Society}
ISSN 01631829
Educational Use Research
Learning Resource Type Article
Publisher Date 1999-06-01
Publisher Place United States
Journal Physical Review, B: Condensed Matter
Volume Number 59
Issue Number 24


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