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Author Lee, S. H. ♦ Fetzer, C. Y. ♦ Stringfellow, G. B. ♦ Lee, D. H. ♦ Seong, T. Y.
Source United States Department of Energy Office of Scientific and Technical Information
Content type Text
Language English
Subject Keyword MATERIALS SCIENCE ♦ GALLIUM COMPOUNDS ♦ INDIUM COMPOUNDS ♦ TELLURIUM ♦ GALLIUM PHOSPHIDES ♦ INDIUM PHOSPHIDES ♦ TELLURIUM ADDITIONS ♦ CRYSTAL DOPING ♦ CHEMICAL VAPOR DEPOSITION ♦ PRECURSOR ♦ PHOTOLUMINESCENCE ♦ ELECTRON DIFFRACTION ♦ SURFACE PROPERTIES ♦ CRYSTAL STRUCTURE
Abstract The donor Te has been added to GaInP during organometallic vapor phase epitaxial growth using the precursor diethyltelluride. In agreement with previous studies, the addition of high Te concentrations leads to the elimination of the CuPt ordering observed in undoped layers. The degree of order is estimated from the low temperature photoluminescence peak energy to decrease from 0.5 at Te concentrations of {lt}2{times}10{sup 17} cm{sup {minus}3} to 0 for Te concentrations of {gt}6{times}10{sup 17} cm{sup {minus}3}. This is verified by transmission electron diffraction studies, which show the elimination of the 1/2{l_brace}111{r_brace} superlattice spots at high Te doping levels. A remarkable change in the surface structure is found to accompany this decrease in ordering: The surfaces become much smoother. Step bunching is observed to disappear for the vicinal GaAs substrates, misoriented from (001) by 3{degree} in the {ital B} direction, and three-dimensional island (or mound) formation is eliminated for the singular (001) substrates. A qualitative model is presented explaining this behavior based on the effect of Te on the step structure and the bonding at step edges, both of which affect the adatom sticking at steps. {copyright} {ital 1999 American Institute of Physics.}
ISSN 00218979
Educational Use Research
Learning Resource Type Article
Publisher Date 1999-04-01
Publisher Place United States
Journal Journal of Applied Physics
Volume Number 85
Issue Number 7


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