Thumbnail
Access Restriction
Open

Author Hong, Seokhwan ♦ Kim, Ji Whan ♦ Lee, Sangyeob
Source United States Department of Energy Office of Scientific and Technical Information
Content type Text
Language English
Subject Keyword CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS ♦ CHARGE TRANSPORT ♦ DOPED MATERIALS ♦ ELECTRONS ♦ HOLES ♦ IRIDIUM ♦ LAYERS ♦ LEAKS ♦ LIFETIME ♦ LIGHT EMITTING DIODES ♦ RADIATIVE DECAY ♦ THERMAL DEGRADATION
Abstract We demonstrate a method to improve lifetime of a phosphorescent organic light emitting diode (OLED) using an electron scavenger layer (ESL) in a hole transporting layer (HTL) of the device. We use a bis(1-(phenyl)isoquinoline)iridium(III)acetylacetonate [Ir(piq){sub 2}(acac)] doped HTL to stimulate radiative decay, preventing thermal degradation in HTL. The ESL effectively prevented non-radiative decay of leakage electron in HTL by converting non-radiative decay to radiative decay via a phosphorescent red emitter, Ir(piq){sub 2}(acac). The lifetime of device (t{sub 95}: time after 5% decrease of luminance) has been increased from 75 h to 120 h by using the ESL in a phosphorescent green-emitting OLED.
ISSN 00036951
Educational Use Research
Learning Resource Type Article
Publisher Date 2015-07-27
Publisher Place United States
Journal Applied Physics Letters
Volume Number 107
Issue Number 4


Open content in new tab

   Open content in new tab