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Author Kundu, Asish K. ♦ Menon, Krishnakumar S. R.
Source United States Department of Energy Office of Scientific and Technical Information
Content type Text
Language English
Subject Keyword MATERIALS SCIENCE ♦ CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS ♦ DOMAIN STRUCTURE ♦ ELECTRON DIFFRACTION ♦ ELECTRONIC STRUCTURE ♦ EPITAXY ♦ EVAPORATION ♦ OXYGEN ♦ PHOTOEMISSION ♦ STOICHIOMETRY ♦ SUBSTRATES ♦ SURFACES ♦ THIN FILMS ♦ VANADIUM ♦ VANADIUM OXIDES ♦ X-RAY PHOTOELECTRON SPECTROSCOPY
Abstract V{sub 2}O{sub 3} ultrathin films were grown on Ag(001) substrate by reactive evaporation of vanadium (V) metal in presence of oxygen and their structural and electronic properties were studied by Low Energy Electron Diffraction (LEED), X-ray Photo Electron Spectroscopy (XPS) and Angle Resolved Photoemission Spectroscopic (ARPES) techniques, respectively. On top of square symmetry substrate Ag(001), hexagonal surface of V{sub 2}O{sub 3} (0001) is stabilized in the form of two domain structure, rotated by 30°(or 90°)to each other, has been observed by LEED. Rather than epitaxial flat monolayer, formation of well-ordered V{sub 2}O{sub 3} (0001) island has been confirmed from the LEED and the Photoemission Spectroscopic (PES) study. Stoichiometry of the grown film was confirmed by the XPS study. Evolution of valance band electronic structure of V{sub 2}O{sub 3} (0001) surface has been studied as a function of film thickness by ARPES.
ISSN 0094243X
Educational Use Research
Learning Resource Type Article
Publisher Date 2016-05-06
Publisher Place United States
Volume Number 1728
Issue Number 1


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