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Author Jiang, Zhenyu ♦ Liu, Yan ♦ Mo, Chen ♦ Wang, Li ♦ Atalla, Mahmoud R. M. ♦ Liu, Jie ♦ Kurhade, Kandhar K. ♦ Xu, Jian ♦ Hu, Wenjia ♦ Zhang, Wenjun ♦ You, Guanjun ♦ Zhang, Yu
Source United States Department of Energy Office of Scientific and Technical Information
Content type Text
Language English
Subject Keyword CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS ♦ CARRIERS ♦ DEPLETION LAYER ♦ HOLES ♦ LEAD SELENIDES ♦ MATHEMATICAL SOLUTIONS ♦ PHOTODETECTORS ♦ QUANTUM DOTS ♦ RECOMBINATION
Abstract In an attempt to suppress the dark current, the barrier layer engineer for solution-processed PbSe colloidal quantum-dot (CQD) photodetectors has been investigated in the present study. It was found that the dark current can be significantly suppressed by implementing two types of carrier blocking layers, namely, hole blocking layer and electron blocking layer, sandwiched in between two active PbSe CQD layers. Meanwhile no adverse impact has been observed for the photo current. Our study suggests that this improvement resides on the transport pathway created via carrier recombination at intermediate layer, which provides wide implications for the suppression of dark current for infrared photodetectors.
ISSN 00036951
Educational Use Research
Learning Resource Type Article
Publisher Date 2015-08-31
Publisher Place United States
Journal Applied Physics Letters
Volume Number 107
Issue Number 9


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