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Author Tondini, S. ♦ Pucker, G. ♦ Pavesi, L.
Source United States Department of Energy Office of Scientific and Technical Information
Content type Text
Language English
Subject Keyword CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS ♦ CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY ♦ CAPACITANCE ♦ ELECTRIC POTENTIAL ♦ ELECTROLUMINESCENCE ♦ INJECTION ♦ LAYERS ♦ LIGHT EMITTING DIODES ♦ METALS ♦ NANOSTRUCTURES ♦ P-TYPE CONDUCTORS ♦ RECOMBINATION ♦ SILICA ♦ SILICON ♦ SILICON OXIDES ♦ SUBSTRATES ♦ TIME RESOLUTION
Abstract The role of the inversion layer on injection and recombination phenomena in light emitting diodes (LEDs) is here studied on a multilayer (ML) structure of silicon nanocrystals (Si-NCs) embedded in SiO{sub 2}. Two Si-NC LEDs, which are similar for the active material but different in the fabrication process, elucidate the role of the non-radiative recombination rates at the ML/substrate interface. By studying current- and capacitance-voltage characteristics as well as electroluminescence spectra and time-resolved electroluminescence under pulsed and alternating bias pumping scheme in both the devices, we are able to ascribe the different experimental results to an efficient or inefficient minority carrier (electron) supply by the p-type substrate in the metal oxide semiconductor LEDs.
ISSN 00218979
Educational Use Research
Learning Resource Type Article
Publisher Date 2016-09-07
Publisher Place United States
Journal Journal of Applied Physics
Volume Number 120
Issue Number 9


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