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Author Eliseev, P. G. ♦ Lee, J. ♦ Osinski, M. A.
Source United States Department of Energy Office of Scientific and Technical Information
Content type Text
Language English
Subject Keyword MATERIALS SCIENCE ♦ CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY ♦ CARRIERS ♦ ELECTRICAL PROPERTIES ♦ ELECTRONS ♦ EMISSION ♦ NITRIDES ♦ OPTICAL PROPERTIES ♦ QUANTUM WELLS ♦ QUENCHING ♦ SEMICONDUCTOR MATERIALS ♦ TEMPERATURE RANGE 0065-0273 K ♦ ULTRAVIOLET RADIATION ♦ ELECTROMAGNETIC RADIATION ♦ ELEMENTARY PARTICLES ♦ FERMIONS ♦ LEPTONS ♦ MATERIALS ♦ NANOSTRUCTURES ♦ NITROGEN COMPOUNDS ♦ PHYSICAL PROPERTIES ♦ PNICTIDES ♦ RADIATIONS ♦ TEMPERATURE RANGE
Abstract Some radiative and electric properties of heterostructures based on semiconductor nitrides emitting in the visible and UV regions are considered. The following anomalous properties of UV-emitting heterostructures are studied: the low-temperature emission quenching, a strong non-ideality of I-V curves, and the increase in the slope of these characteristics upon cooling. The anomalous emission quenching is especially typical for {approx}3-nm thick single-quantum-well structures, but it is absent in a 50-nm thick double heterostructure. It seems that this difference is caused by the fact that the capture of carriers at the levels in quantum wells slows down upon cooling, and a 'through' injection of carriers occurs into the opposite emitter layer. In addition, electrons injected into the p region reduce its resistance. The consideration of the injection-induced conductivity in the passive layer allows us to explain satisfactorily the electric anomalies. (active media)
ISSN 10637818
Educational Use Research
Learning Resource Type Article
Publisher Date 2004-12-31
Publisher Place United States
Journal Quantum Electronics
Volume Number 34
Issue Number 12


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