Thumbnail
Access Restriction
Open

Author Haider, F. A. ♦ Chee, F. P. ♦ Abu Hassan, H. ♦ Saafie, S. ♦ Afishah, A.
Source United States Department of Energy Office of Scientific and Technical Information
Content type Text
Language English
Subject Keyword CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS ♦ ELECTRICAL PROPERTIES ♦ GAIN ♦ INTERFACES ♦ IRRADIATION ♦ MEV RANGE 10-100 ♦ MOS TRANSISTORS ♦ NEUTRON FLUENCE ♦ NEUTRONS ♦ TRAPPING ♦ TRAPS
Abstract Neutron radiation causes significant changes in the characteristics of MOS devices by the creation of oxide-trapped charge and interface traps. The degradation of the current gain of the GF4936 dual n-channel depletion mode MOS transistor, caused by neutron displacement defects, was measured using in-situ method during neutron irradiation. The average degradation of the gain current is 35 mA at maximum fluence of 2.0 × 10{sup 10} n/cm2 while with an average of 25 mA at minimum fluence of 5.0 × 10{sup 8} n/cm{sup 2}. The change in channel current gain increased proportionally with neutron fluence, meanwhile drain saturation current decreased proportionally with the neutron fluence.
ISSN 0094243X
Educational Use Research
Learning Resource Type Article
Publisher Date 2016-01-22
Publisher Place United States
Volume Number 1704
Issue Number 1


Open content in new tab

   Open content in new tab