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Author Yadav, Anil K. ♦ Majhi, Kunjalata ♦ Banerjee, Abhishek ♦ Ganesan, R. ♦ Kumar, P. S. Anil ♦ Devi, Poonam ♦ Mishra, P. ♦ Lohani, H. ♦ Sekhar, B. R.
Source United States Department of Energy Office of Scientific and Technical Information
Content type Text
Language English
Subject Keyword CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY ♦ BISMUTH SELENIDES ♦ CRYSTAL GROWTH ♦ DIELECTRIC MATERIALS ♦ DISPERSIONS ♦ EMISSION ♦ EMISSION SPECTROSCOPY ♦ MONOCRYSTALS ♦ ORIENTATION ♦ SOLIDS ♦ STOICHIOMETRY ♦ SURFACE PROPERTIES ♦ SURFACES ♦ TITANIUM SULFIDES ♦ X-RAY DIFFRACTION
Abstract Recently discovered, Topological Insulators (TIs) have garnered enormous amount of attention owing to its unique surface properties which has potential applications in the field of spintronics and other modern technologies. For all this, it should require a very good quality samples. There are a number of techniques suggested by people for the growth of good quality TIs. Here, we are reporting the growth of high quality single crystals of Bi{sub 2}Se{sub 3} (a TI) by slow cooling solid-state reaction method. X-ray diffraction measurements performed on a cleaved flake of single crystal Bi{sub 2}Se{sub 3} showed up with proper orientations of the crystal planes. High energy X-ray diffraction has been performed to confirm the stoichiometry of the compound and also recorded Laue patterns prove the single crystalline nature of Bi{sub 2}Se{sub 3}. Moreover, angle resolved photo-emission spectroscopy (ARPES) carried out on a flat crystal flake shows distinct Dirac dispersion of surface bands at the gamma point clarifying it as a 3D topological insulator.
ISSN 0094243X
Educational Use Research
Learning Resource Type Article
Publisher Date 2016-05-23
Publisher Place United States
Volume Number 1731
Issue Number 1


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