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Author Cheng, Ke ♦ Wang, Xiaoyun ♦ Liu, Jingjing ♦ Huang, Yuqian ♦ Xue, Ming ♦ Kuang, Zhongcheng ♦ Wan, Shaoming ♦ Du, Zuliang
Source United States Department of Energy Office of Scientific and Technical Information
Content type Text
Language English
Subject Keyword MATERIALS SCIENCE ♦ CONCENTRATION RATIO ♦ COPPER ♦ COPPER ALLOYS ♦ COPPER SULFIDES ♦ ELECTRICAL PROPERTIES ♦ ELECTRODEPOSITION ♦ ELECTRON MICROSCOPY ♦ FABRICATION ♦ INDIUM ♦ INDIUM ALLOYS ♦ INDIUM SULFIDES ♦ LAYERS ♦ MORPHOLOGY ♦ OPTICAL PROPERTIES ♦ RAMAN SPECTROSCOPY ♦ THIN FILMS
Abstract Highlights: • Cu/In bilayer was fabricated by BMSMW deposition technique. • High quality CIS film was successfully fabricated. • A preferable ratio of Cu:In:S close to 1:1:2 was approached. • The SPV response as high as 6 mV was achieved. - Abstract: High-quality CuInS{sub 2} (CIS) thin films have been fabricated by sulfurization of electrodeposited copper–indium bilayer. A novel bell-like wave modulated square wave (BWMSW) electrodeposition technique is employed for the deposition of copper thin film. Three independent parameters (current or potential, frequency, duty cycle) are available for the BWMSW electrodeposition, which is different from the traditional electrodeposition technique with only one adjustable parameter (current or potential). The influences of deposition parameters such as frequency, duty cycle and the concentration of complexing agent are investigated. Benefited from the high quality copper film obtained by the BWMSW technique, the indium film is electrodeposited successfully on the copper layer to form a compact copper–indium alloy bilayer. After sulfurized at 600 °C for 60 min, the phase pure CIS film is obtained with better crystallinity. The structures, morphologies and optoelectronic properties of the CIS film are also characterized.
ISSN 00255408
Educational Use Research
Learning Resource Type Article
Publisher Date 2016-04-15
Publisher Place United States
Journal Materials Research Bulletin
Volume Number 76


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