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Author Moon, B. K. ♦ Hironaka, K. ♦ Isobe, C. ♦ Hishikawa, S.
Sponsorship (US)
Source United States Department of Energy Office of Scientific and Technical Information
Content type Text
Publisher The American Physical Society
Language English
Subject Keyword MATERIALS SCIENCE ♦ CAPACITORS ♦ CHEMICAL VAPOR DEPOSITION ♦ ELECTRICAL PROPERTIES ♦ FABRICATION ♦ HYSTERESIS ♦ PEROVSKITE ♦ PHYSICS ♦ PLASMA ♦ SUBSTRATES
Abstract The fabrication of SrBi{sub 2}Ta{sub 2}O{sub 9} (SBT) films using plasma-assisted metalorganic chemical vapor deposition (P-MOCVD) has been investigated. Optimizing the process conditions under plasma environment, amorphous SBT films were successfully deposited at a substrate temperature below 300{degree}C, suggesting that the P-MOCVD process effectively utilizes plasma energy to promote the reaction and decomposition of metal organic source molecules. The amorphous SBT films were crystallized to the bilayered perovskite SBT films by a postannealing at 725{degree}C. Thin SBT capacitors fabricated using P-MOCVD showed a good step coverage and the excellent ferroelectric properties including endurance. Low voltage operation below 1.5 V was successfully achieved using a 75 nm SBT capacitor, in which the signal level derived from the hysteresis curve suggests the feasibility of application to a 64 Mbit ferroelectric random access memories. {copyright} 2001 American Institute of Physics.
ISSN 00218979
Educational Use Research
Learning Resource Type Article
Publisher Date 2001-06-01
Publisher Place United States
Journal Journal of Applied Physics
Volume Number 89
Issue Number 11


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