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Author Kent, P. R. C. ♦ Zunger, Alex
Sponsorship (US)
Source United States Department of Energy Office of Scientific and Technical Information
Content type Text
Publisher The American Physical Society
Language English
Subject Keyword CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS ♦ ALLOYS ♦ CHAINS ♦ CONFINEMENT ♦ ELECTRONIC STRUCTURE ♦ ELECTRONS ♦ INDIUM ♦ LUMINESCENCE ♦ MICROSCOPY ♦ OPTICAL PROPERTIES ♦ ORIGIN ♦ PHOTOLUMINESCENCE
Abstract The electronic structure and optical properties of cubic (nonpiezoelectric) InGaN are investigated using large scale atomistic empirical pseudopotential calculations. We find that (i) strong hole localization exists even in the homogeneous random alloy, with a preferential localization along the [1,1,0] In--N--In--N--In chains, (ii) even modest sized (<50 {angstrom}) indium rich quantum dots provide substantial quantum confinement and readily reduce emission energies relative to the random alloy by 200--300 meV, depending on size and composition, consistent with current photoluminescence, microscopy, and Raman data. The dual effects of alloy hole localization and localization of electrons and hole at intrinsic quantum dots are responsible for the emission characteristics of current grown cubic InGaN alloys.
ISSN 00036951
Educational Use Research
Learning Resource Type Article
Publisher Date 2001-09-24
Publisher Place United States
Journal Applied Physics Letters
Volume Number 79
Issue Number 13


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