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Author Kisteneva, M. G. ♦ Khudyakova, E. S. ♦ Shandarov, S. M. ♦ Akrestina, A. S. ♦ Dyu, V. G. ♦ Kargin, Yu F.
Source United States Department of Energy Office of Scientific and Technical Information
Content type Text
Language English
Subject Keyword MATERIALS SCIENCE ♦ ABSORPTION SPECTRA ♦ AIR ♦ ALUMINIUM ♦ ANNEALING ♦ BISMUTH COMPOUNDS ♦ CONCENTRATION RATIO ♦ CRYSTALS ♦ DOPED MATERIALS ♦ EXPERIMENTAL DATA ♦ GERMANIUM OXIDES ♦ IONIZATION ♦ LASER RADIATION ♦ SILICON OXIDES ♦ TEMPERATURE RANGE 0400-1000 K ♦ TITANIUM OXIDES ♦ WAVELENGTHS
Abstract The influence of laser irradiation at wavelengths of 532 and 655 nm and annealing in air at temperatures from 200 to 370 °C on optical absorption spectra of undoped bismuth silicon oxide and bismuth germanium oxide and aluminium-doped bismuth titanium oxide crystals has been studied experimentally. The experimental data have been interpreted in terms of a model for extrinsic absorption that takes into account not only the contribution of the photoexcitation of electrons from deep donor centres with a normal distribution of their concentration with respect to ionisation energy but also that of intracentre transitions. (laser applications and other topics in quantum electronics)
ISSN 10637818
Educational Use Research
Learning Resource Type Article
Publisher Date 2015-07-31
Publisher Place United States
Journal Quantum Electronics
Volume Number 45
Issue Number 7


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