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Author Netzel, Carsten ♦ Jeschke, Jörg ♦ Brunner, Frank ♦ Knauer, Arne ♦ Weyers, Markus
Source United States Department of Energy Office of Scientific and Technical Information
Content type Text
Language English
Subject Keyword CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS ♦ CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY ♦ ALUMINIUM NITRIDES ♦ DISLOCATIONS ♦ EPITAXY ♦ EXCITATION ♦ GALLIUM NITRIDES ♦ ILLUMINANCE ♦ LAYERS ♦ PHOTOLUMINESCENCE ♦ POWER DENSITY ♦ RECOMBINATION ♦ SEMICONDUCTOR MATERIALS ♦ SURFACES ♦ TEMPERATURE DEPENDENCE ♦ TEMPERATURE RANGE 0065-0273 K ♦ TEMPERATURE RANGE 0273-0400 K
Abstract We have studied the effect of continuous illumination with above band gap energy on the emission intensity of polar (Al)GaN bulk layers during the photoluminescence experiments. A temporal change in emission intensity on time scales from seconds to hours is based on the modification of the semiconductor surface states and the surface recombination by the incident light. The temporal behavior of the photoluminescence intensity varies with the parameters such as ambient atmosphere, pretreatment of the surface, doping density, threading dislocation density, excitation power density, and sample temperature. By means of temperature-dependent photoluminescence measurements, we observed that at least two different processes at the semiconductor surface affect the non-radiative surface recombination during illumination. The first process leads to an irreversible decrease in photoluminescence intensity and is dominant around room temperature, and the second process leads to a delayed increase in intensity and becomes dominant around T = 150–200 K. Both processes become slower when the sample temperature decreases from room temperature. They cease for T < 150 K. Stable photoluminescence intensity at arbitrary sample temperature was obtained by passivating the analyzed layer with an epitaxially grown AlN cap layer.
ISSN 00218979
Educational Use Research
Learning Resource Type Article
Publisher Date 2016-09-07
Publisher Place United States
Journal Journal of Applied Physics
Volume Number 120
Issue Number 9


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