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Author Chikoidze, E. ♦ Dumont, Y. ♦ Bardeleben, H. J. von ♦ Akaiwa, K. ♦ Shigematsu, E. ♦ Kaneko, K. ♦ Fujita, S.
Source United States Department of Energy Office of Scientific and Technical Information
Content type Text
Language English
Subject Keyword CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS ♦ CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY ♦ CHEMICAL VAPOR DEPOSITION ♦ CONCENTRATION RATIO ♦ DOPED MATERIALS ♦ ELECTRON SPIN RESONANCE ♦ ELECTRONS ♦ EPITAXY ♦ GALLIUM OXIDES ♦ MAGNETIC PROPERTIES ♦ METALS ♦ OPTICAL PROPERTIES ♦ SPECTROSCOPY ♦ SYMMETRY ♦ THIN FILMS ♦ TRANSPORT THEORY
Abstract We investigated the effect of Sn doping on the optical, electrical, and magneto transport properties of epitaxial α-Ga{sub 2}O{sub 3} thin films grown by mist-Chemical Vapour Deposition. Sn introduces a shallow donor level at ∼0.1 eV and has a high solubility allowing doping up to 10{sup 20 }cm{sup −3}. The lowest obtained resistivity of the films is 2.0 × 10{sup −1 }Ω cm. The Sn doped films with a direct band gap of 5.1 eV remain transparent in the visible and UV range. The electrical conduction mechanism and magneto-transport have been investigated for carrier concentrations below and above the insulator-metal transition. The magnetic properties of the neutral Sn donor and the conduction electrons have been studied by electron spin resonance spectroscopy. A spin S = 1/2 state and C{sub 3V} point symmetry of the neutral Sn donor is found to be in good agreement with the model of a simple Sn{sub Ga} center.
ISSN 00218979
Educational Use Research
Learning Resource Type Article
Publisher Date 2016-07-14
Publisher Place United States
Journal Journal of Applied Physics
Volume Number 120
Issue Number 2


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