Thumbnail
Access Restriction
Open

Author Guo, Y. ♦ Li, H. ♦ Robertson, J.
Source United States Department of Energy Office of Scientific and Technical Information
Content type Text
Language English
Subject Keyword CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS ♦ CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY ♦ ALUMINIUM NITRIDES ♦ ALUMINIUM OXIDES ♦ COMPARATIVE EVALUATIONS ♦ DEFECTS ♦ DIELECTRIC MATERIALS ♦ DISTRIBUTION ♦ ENERGY LEVELS ♦ FIELD EFFECT TRANSISTORS ♦ GALLIUM ARSENIDES ♦ GERMANIUM ♦ INDIUM ARSENIDES ♦ LAYERS ♦ NITROGEN ♦ OXYGEN ♦ RELIABILITY ♦ SEMICONDUCTOR MATERIALS ♦ STACKS ♦ STRESSES ♦ TRAPPING ♦ VACANCIES
Abstract AlN and Al oxy-nitride dielectric layers are proposed instead of Al{sub 2}O{sub 3} as a component of the gate dielectric stacks on higher mobility channels in metal oxide field effect transistors to improve their positive bias stress instability reliability. It is calculated that the gap states of nitrogen vacancies in AlN lie further away in energy from the semiconductor band gap than those of oxygen vacancies in Al{sub 2}O{sub 3}, and thus AlN might be less susceptible to charge trapping and have a better reliability performance. The unfavourable defect energy level distribution in amorphous Al{sub 2}O{sub 3} is attributed to its larger coordination disorder compared to the more symmetrically bonded AlN. Al oxy-nitride is also predicted to have less tendency for charge trapping.
ISSN 00218979
Educational Use Research
Learning Resource Type Article
Publisher Date 2016-05-28
Publisher Place United States
Journal Journal of Applied Physics
Volume Number 119
Issue Number 20


Open content in new tab

   Open content in new tab