Thumbnail
Access Restriction
Open

Author Liliental-Weber, Z. ♦ Lin, X. W. ♦ Washburn, J. ♦ Schaff, W.
Source United States Department of Energy Office of Scientific and Technical Information
Content type Text
Language English
Subject Keyword MATERIALS SCIENCE ♦ GALLIUM ARSENIDES ♦ PRECIPITATION ♦ MOLECULAR BEAM EPITAXY ♦ ANNEALING ♦ VACANCIES ♦ DIFFUSION ♦ CRYSTAL DEFECTS ♦ ENTHALPY
Abstract Electron microscopy studies of annealed GaAs layers grown by molecular beam epitaxy at low temperature (200 {degree}C) were used to monitor growth of As precipitates. Ostwald ripening kinetics was used to deduce a migration enthalpy of 1.4{plus_minus}0.3 eV for the diffusion mediating defect. A conclusive picture of the dominant diffusion mechanism can be given, attributing this value to the migration enthalpy of gallium vacancies ({ital V}{sub Ga}), which is well established by other experiments. The present studies indicate that growth of As precipitates is driven by supersaturation of {ital V}{sub Ga}.
ISSN 00036951
Educational Use Research
Learning Resource Type Article
Publisher Date 1995-04-17
Publisher Department Lawrence Berkeley National Laboratory
Publisher Place United States
Journal Applied Physics Letters
Volume Number 66
Issue Number 16
Organization Lawrence Berkeley National Laboratory


Open content in new tab

   Open content in new tab