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Author Plekhanov, P. S. ♦ Goesele, U. M. ♦ Tan, T. Y.
Sponsorship USDOE
Source United States Department of Energy Office of Scientific and Technical Information
Content type Text
Language English
Subject Keyword MATERIALS SCIENCE ♦ SOLAR ENERGY ♦ GETTERS ♦ SIMULATION ♦ SOLAR CELLS ♦ SILICON ♦ IMPURITIES ♦ GETTERING ♦ IRON ♦ CARRIER LIFETIME ♦ TIME DEPENDENCE ♦ PRECIPITATION ♦ COMPUTERIZED SIMULATION
Abstract Numerical modeling of impurity gettering from multicrystalline Si for solar cell production has been carried out using Fe as a model impurity. Calculated nonradiative minority carrier lifetime change in the course of gettering is used as a tool in evaluating the gettering efficiency. Derivation of capture crosssection of impurity precipitates, as compared to single atom recombination centers, is presented. Low efficiency of conventional application of gettering process is explained by the modeling results. Variable temperature gettering process is modeled and predicted to provide high gettering efficiency and short needed gettering times. {copyright} {ital 1999 American Institute of Physics.}
ISSN 0094243X
Educational Use Research
Learning Resource Type Article
Publisher Date 1999-03-01
Publisher Place United States
Volume Number 462
Issue Number 1
Technical Publication No. CONF-980935-


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