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Author Hader, J. ♦ Bossert, D. ♦ Stohs, J. ♦ Chow, W. W. ♦ Koch, S. W. ♦ Moloney, J. V.
Source United States Department of Energy Office of Scientific and Technical Information
Content type Text
Language English
Subject Keyword ENGINEERING NOT INCLUDED IN OTHER CATEGORIES ♦ INDIUM COMPOUNDS ♦ ALUMINIUM COMPOUNDS ♦ SEMICONDUCTOR LASERS ♦ REFRACTIVE INDEX ♦ LINE WIDTHS ♦ CARRIER DENSITY ♦ MANY-BODY PROBLEM ♦ GAIN ♦ GALLIUM ARSENIDES ♦ INDIUM ARSENIDES
Abstract The linewidth enhancement factor in single quantum-well graded index separate confinement heterostructure semiconductor lasers is investigated theoretically and experimentally. For thin wells, a small linewidth enhancement factor is obtained which clamps with increasing carrier density, in contrast to the monotonous increase observed for thicker wells. Microscopic many-body calculations reproduce the experimental observations attributing the clamping to excitation dependent gain shifts and the influence of the population of off-resonant states on the refractive index. {copyright} {ital 1999 American Institute of Physics.}
ISSN 00036951
Educational Use Research
Learning Resource Type Article
Publisher Date 1999-04-01
Publisher Place United States
Journal Applied Physics Letters
Volume Number 74
Issue Number 16


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