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Author Maltez, R. L. ♦ Liliental-Weber, Z. ♦ Washburn, J. ♦ Behar, M. ♦ Klein, P. B. ♦ Specht, P. ♦ Weber, E. R.
Source United States Department of Energy Office of Scientific and Technical Information
Content type Text
Language English
Subject Keyword MATERIALS SCIENCE ♦ CRYSTAL STRUCTURE ♦ BERYLLIUM ♦ ERBIUM ♦ GALLIUM ARSENIDES ♦ BERYLLIUM ADDITIONS ♦ TRANSMISSION ELECTRON MICROSCOPY ♦ PHOTOLUMINESCENCE ♦ ION IMPLANTATION ♦ ERBIUM IONS ♦ ANNEALING ♦ DOPED MATERIALS ♦ STRUCTURAL CHEMICAL ANALYSIS
Abstract Characteristic 1.54 {mu}m 4f-4f emission has been observed from Er{sup 3+} centers in Er-implanted and annealed, low-temperature grown GaAs:Be samples, while cross-sectional transmission electron microscopy (TEM) studies reveal very little structural damage for elevated temperature implants. No Er emission was observed from any of the as-implanted samples, while the Er emission intensity was significantly more intense after 650thinsp{degree}C anneals than after 750thinsp{degree}C anneals. Significant enhancement of the optically active Er incorporation was achieved when the implantation was carried out at 300thinsp{degree}C. For the two total Er fluences employed (5.5{times}10{sup 13} and 13.6{times}10{sup 13}thinspEr/cm{sup 2}) the Er emission intensity exhibited a linear dependence upon implantation fluence, while TEM indicated no significant increase in the damage level at the higher fluence 300thinsp{degree}C implant. {copyright} {ital 1998 American Institute of Physics.}
ISSN 00036951
Educational Use Research
Learning Resource Type Article
Publisher Date 1998-10-01
Publisher Place United States
Journal Applied Physics Letters
Volume Number 73
Issue Number 15


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