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Author Zhang, S. B. ♦ Wei, S. ♦ Zunger, A.
Sponsorship USDOE
Source United States Department of Energy Office of Scientific and Technical Information
Content type Text
Language English
Subject Keyword PHYSICS ♦ FERMI LEVEL ♦ SEMICONDUCTOR MATERIALS ♦ CRYSTAL DOPING ♦ THERMODYNAMIC PROPERTIES ♦ CRYSTAL DEFECTS ♦ ELECTRONIC STRUCTURE
Abstract Using defect thermodynamics, we discuss physical factors that affect doping limits in semiconductors. The dependencies of the defect formation enthalpy on the atomic chemical potentials and on the electron Fermi energy are demonstrated. These dependencies, in particular on the Fermi energy, lead to spontaneous formation of charge-compensating defects that can limit doping. Experimental data compiled for III-V, II-VI, and I-III-VI{sub 2} compounds support this view and further provide insight into the connections among different host materials. We argue that what matters is not the magnitude of the band gap that determines the dopability of a material, but rather, the relative position of the conduction-band minimum (in the case of n-doping) and the valence-band maximum (in the case of p-doping) with respect to vacuum. {copyright} {ital 1999 American Institute of Physics.}
ISSN 0094243X
Educational Use Research
Learning Resource Type Article
Publisher Date 1999-03-01
Publisher Department National Renewable Energy Laboratory
Publisher Place United States
Volume Number 462
Issue Number 1
Technical Publication No. CONF-980935-
Organization National Renewable Energy Laboratory


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