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Author Salditt, T. ♦ Lott, D. ♦ Metzger, T. H. ♦ Peisl, J. ♦ Vignaud, G. ♦ j., P. ♦ Schaerpf, O. ♦ Hinze, P. ♦ Lauer, R.
Source United States Department of Energy Office of Scientific and Technical Information
Content type Text
Language English
Subject Keyword MATERIALS SCIENCE ♦ TUNGSTEN ♦ SUPERLATTICES ♦ INTERFACES ♦ AMORPHOUS STATE ♦ SILICON ♦ SPUTTERING ♦ ROUGHNESS ♦ CORRELATION FUNCTIONS ♦ X-RAY DIFFRACTION ♦ REFLECTIVITY
Abstract We have studied interfacial roughness in amorphous W/Si multilayers grown by rf sputtering at different deposition parameters by cross-sectional transmission electron microscopy, x-ray reflectivity, and diffuse x-ray scattering. The diffuse scattering intensity has been recorded in an unprecedented wide range of parallel momentum transfer, 5{times}10{sup {minus}4} A{sup {minus}1}{le}{ital q}{sub {parallel}}{le}1 A{sup {minus}1}, giving access to the height-height self- and cross-correlation functions on lateral length scales between a few A and 1 {mu}m. The results are compared for the different samples and discussed in view of the deposition parameters. {copyright} {ital 1996 The American Physical Society.}
ISSN 01631829
Educational Use Research
Learning Resource Type Article
Publisher Date 1996-08-01
Publisher Place United States
Journal Physical Review, B: Condensed Matter
Volume Number 54
Issue Number 8


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