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Author Zi, J. ♦ Min, B. J. ♦ Lu, Y. ♦ Wang, C. Z. ♦ Ho, K. M.
Sponsorship (US)
Source United States Department of Energy Office of Scientific and Technical Information
Content type Text
Publisher The American Physical Society
Language English
Subject Keyword CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS ♦ DIFFUSION ♦ DIMERS ♦ PHYSICS ♦ SILICON
Abstract The binding sites and diffusion pathways of Si adatoms on a c(4x2) reconstructed Si(001) surface are investigated by a tight-binding method with an environment-dependent silicon potential in conjunction with ab initio calculations using the Car--Parrinello method. A new diffusion pathway along the trough edge driven by dimer flipping is found with a barrier of 0.74 eV, comparable to that of 0.68 eV along the top of the dimer rows.
ISSN 00036951
Educational Use Research
Learning Resource Type Article
Publisher Date 2000-12-18
Publisher Place United States
Journal Applied Physics Letters
Volume Number 77
Issue Number 25


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