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Author Manasreh, M. O. ♦ Baranowski, J. M. ♦ Pakula, K. ♦ Jiang, H. X. ♦ Lin, J.
Source United States Department of Energy Office of Scientific and Technical Information
Content type Text
Language English
Subject Keyword MATERIALS SCIENCE ♦ GALLIUM COMPOUNDS ♦ HYDROGEN ♦ CARBON ♦ GALLIUM NITRIDES ♦ VIBRATIONAL STATES ♦ CHEMICAL VAPOR DEPOSITION ♦ INFRARED SPECTRA ♦ DOPED MATERIALS ♦ SILICON ADDITIONS ♦ MAGNESIUM ADDITIONS ♦ CRYSTAL DEFECTS ♦ SEMICONDUCTOR MATERIALS ♦ CARBON COMPLEXES ♦ HYDROGEN COMPLEXES
Abstract Localized vibrational modes of carbon-hydrogen complexes in metalorganic chemical vapor deposition grown GaN on sapphire were studied using a Fourier-transform infrared spectroscopy technique. Three distinctive localized vibrational modes were observed around 2850, 2922, and 2959 cm{sup {minus}1} for undoped, Si-, and Mg-doped samples. These peaks are related to CH, CH{sub 2}, and CH{sub 3} defect complexes, respectively. However, the localized vibrational modes were not observed in some undoped samples, which is indicative of high quality grown epitaxial layers. It is also observed that the frequencies and intensities of the localized vibrational modes are sample dependent. {copyright} {ital 1999 American Institute of Physics.}
ISSN 00036951
Educational Use Research
Learning Resource Type Article
Publisher Date 1999-08-01
Publisher Place United States
Journal Applied Physics Letters
Volume Number 75
Issue Number 5


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