Thumbnail
Access Restriction
Open

Author Zou, Jianxiong ♦ Liu, Bo ♦ Jiao, Guohua ♦ Lu, Yuanfu ♦ Dong, Yuming ♦ Li, Qiran
Source United States Department of Energy Office of Scientific and Technical Information
Content type Text
Language English
Subject Keyword CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY ♦ ANNEALING ♦ ATOMS ♦ CARBON ♦ COPPER ♦ CRITICAL TEMPERATURE ♦ FILMS ♦ GRAIN BOUNDARIES ♦ MAGNETRONS ♦ MOLYBDENUM ♦ MOLYBDENUM CARBIDES ♦ OXYGEN ♦ RUTHENIUM ♦ SHEETS ♦ SOLID SOLUTIONS ♦ SPUTTERING ♦ TEMPERATURE RANGE 0400-1000 K
Abstract 100 nm thick RuMoC films and 5 nm thick RuMoC films with Cu capping have been deposited on Si(111) by magnetron co-sputtering with Ru and MoC confocal targets. The samples were subsequently annealed at temperatures ranging from 450 to 650 °C in vacuum at a pressure of 3 × 10{sup −4} Pa to study the annealing effects on the microstructures and properties of RuMoC films for advanced seedless Cu metallization applications. The sheet resistances, residual oxygen contents, and microstructures of the RuMoC films have close correlation with the doping contents of Mo and C, which can be easily controlled by the deposition power ratio of MoC versus Ru targets (DPR). When DPR was 0.5, amorphous RuMoC film (marked as RuMoC II) with low sheet resistances and residual oxygen contents was obtained. The fundamental relationship between the annealing temperatures with the microstructures and properties of the RuMoC films was investigated, and a critical temperature point was revealed at about 550 °C where the components and microstructures of the RuMoC II films changed obviously. Results indicated that below 550 °C, the RuMoC II films remained amorphous due to the well-preserved C-Ru and C-Mo bonds. However, above 550 °C, the microstructures of RuMoC II films transformed from amorphous to nano-composite structure due to the breakage of Ru-C bonds, while the supersaturated solid solution MoC segregated out along the grain boundaries of Ru, thus hindering the diffusion of Cu and O atoms. This is the main mechanism of the excellent thermal stability of the RuMoC films after annealing at high temperatures. The results indicated great prospects of amorphous RuMoC films in advanced seedless Cu metallization applications.
ISSN 00218979
Educational Use Research
Learning Resource Type Article
Publisher Date 2016-09-07
Publisher Place United States
Journal Journal of Applied Physics
Volume Number 120
Issue Number 9


Open content in new tab

   Open content in new tab