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Author Zebda, Y. ♦ Helweh, S.A.
Sponsorship IEEE Lasers and Electro-Optics Society ♦ Optical Society of America
Source IEEE Xplore Digital Library
Content type Text
Publisher Institute of Electrical and Electronics Engineers, Inc. (IEEE)
File Format PDF
Copyright Year ©1983
Language English
Subject Domain (in DDC) Natural sciences & mathematics ♦ Physics ♦ Electricity & electronics ♦ Technology ♦ Engineering & allied operations ♦ Applied physics
Subject Keyword Optical control ♦ MESFETs ♦ Threshold voltage ♦ Absorption ♦ Perturbation methods ♦ FETs ♦ Gallium arsenide ♦ Radiative recombination ♦ Nonlinear optics ♦ Nonlinear equations
Abstract A perturbation technique is used to develop a more accurate model of the time varying characteristics of the optically illuminated ion-implanted metal semiconductor field-effect transistor (MESFET) OPFET. In this model, the carrier life time is considered as a function of the carrier concentration in the channel. The carrier concentration in the active channel is altered due to the absorption of the incident light, which affects the carrier life time. The influences of this effect on the device parameters and characteristics is studied and analyzed. Based on this model the current voltage characteristics, the gate-source capacitance, and the threshold voltage of the OPFET have been evaluated for different incident light power intensities. This model shows comparable results to other reported models.
Description Author affiliation :: Dept. of Electr. & Electron. Eng., Sultan Qaboos Univ., Muscat, Oman
ISSN 07338724
Education Level UG and PG
Learning Resource Type Article
Publisher Date 1997-07-01
Publisher Place U.S.A.
Rights Holder Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Volume Number 15
Issue Number 7
Size (in Bytes) 324.47 kB
Page Count 8
Starting Page 1205
Ending Page 1212

Source: IEEE Xplore Digital Library