Thumbnail
Access Restriction
Open

Author Giebeler, C. ♦ Antoniadis, H. ♦ Bradley, D. D. ♦ Shirota, Y.
Source United States Department of Energy Office of Scientific and Technical Information
Content type Text
Language English
Subject Keyword ENGINEERING NOT INCLUDED IN OTHER CATEGORIES ♦ ELECTRON MOBILITY ♦ CURRENT DENSITY ♦ LIGHT EMITTING DIODES ♦ QUANTUM EFFICIENCY ♦ ORGANIC COMPOUNDS ♦ HOLE MOBILITY ♦ ELECTRIC CONDUCTIVITY ♦ INTERFACES ♦ INDIUM OXIDES ♦ TIN OXIDES
Abstract We investigate the influence of the hole-transporting layer (HTL) on the performance of bilayer vapor-deposited organic light-emitting diodes. Three different HTL materials were used: m-MTDATA, triphenyl-diamine, and naphthyl-phenyl-diamine. In all cases, Alq{sub 3} was the electron-transporting layer (ETL). We measure and compare the current density-voltage (J{endash}V) and luminance{endash}voltage ({ital L}{endash}{ital V}) characteristics of these devices and we conclude that the operating voltage is controlled by the type of HTL used and the nature of the hole-injecting indium tin oxide/HTL interface. We found that the device quantum efficiency depends not only on the electron transport characteristics of the ETL but also on the energetics of the HTL/ETL interface. Analysis of the J{endash}V characteristics suggests that current flow in bilayer devices cannot be described sufficiently by a single carrier theory; both hole and electron currents should be considered. {copyright} {ital 1999 American Institute of Physics.}
ISSN 00218979
Educational Use Research
Learning Resource Type Article
Publisher Date 1999-01-01
Publisher Place United States
Journal Journal of Applied Physics
Volume Number 85
Issue Number 1


Open content in new tab

   Open content in new tab