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Author Kuppulingam, B. ♦ Baskar, K.
Source United States Department of Energy Office of Scientific and Technical Information
Content type Text
Language English
Subject Keyword CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY ♦ ANNEALING ♦ ATOMIC FORCE MICROSCOPY ♦ CHEMICAL COMPOSITION ♦ GALLIUM ARSENIDES ♦ GALLIUM NITRIDES ♦ GALLIUM OXIDES ♦ IMPURITIES ♦ NITRIDATION ♦ OPTICAL MICROSCOPY ♦ PHOTOLUMINESCENCE ♦ SCANNING ELECTRON MICROSCOPY ♦ SUBSTRATES ♦ TEMPERATURE RANGE 0273-0400 K ♦ X-RAY DIFFRACTION
Abstract Preparation of GaN on GaAs (100) substrate by annealing and post-nitridation process has been studied. X-ray diffraction analysis confirmed the formation β-Ga{sub 2}O{sub 3} phase on annealed substrate. Nitridation of annealed samples resulted in formation hexagonal structure of GaN. Morphological changes of annealed and nitridated samples were analyzed using optical microscopy, scanning electron microscopy, atomic force microscopy. Chemical composition and elemental impurities were analysed by energy dispersive x-ray diffraction. The room-temperature photoluminescence study of annealed samples shows broad emission from 300 nm to 500 nm related to of β-Ga{sub 2}O{sub 3}, whereas nitridated samples show near band edge emission at 370 nm (3.36 eV) which corresponds to GaN.
ISSN 0094243X
Educational Use Research
Learning Resource Type Article
Publisher Date 2016-05-23
Publisher Place United States
Volume Number 1731
Issue Number 1


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