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Author Wallace, R. L. ♦ Jagannathan, B. ♦ Gu, X. ♦ Sridhar, N. ♦ Etemadi, K. ♦ Chung, D. D. ♦ Anderson, W. A. ♦ Coleman, J.
Sponsorship USDOE
Source United States Department of Energy Office of Scientific and Technical Information
Content type Text
Language English
Subject Keyword SOLAR ENERGY ♦ SOLAR CELLS ♦ ELECTRICAL PROPERTIES ♦ SILICON ♦ LIQUID PHASE EPITAXY ♦ THIN FILMS ♦ CARRIER MOBILITY ♦ EFFICIENCY ♦ CRYSTAL GROWTH ♦ HETEROJUNCTIONS ♦ ELECTRIC CONDUCTIVITY ♦ DARK CONDUCTIVITY
Abstract Thin-film polycrystalline Si is formed on Mo substrates by sputtering Si onto a heated substrate pre-coated with In or Sn. This liquid-phase epitaxy technique produces grain size of many microns and carrier mobility ranging from 10-100 cm{sup 2}/{ital V}-{ital s}. Processes have been developed for laser processing to enhance electrical properties, {ital rf} plasma hydrogenation, microwave hydrogenation and heterojunction solar cell fabrication. Heterojunction solar cells, consisting of a-Si:H/crystalline Si (c-Si) have a theoretical efficiency of 18{percent}. Thus far, we have achieved {ital V}{sub {ital oc}}=0.51V, {ital J}{sub {ital sc}}=27 mA/cm{sup 2} and {ital FF}=0.49, without an antireflection coating. {copyright} {ital 1996 American Institute of Physics.}
ISSN 0094243X
Educational Use Research
Learning Resource Type Article
Publisher Date 1996-01-01
Publisher Place United States
Volume Number 353
Issue Number 1
Technical Publication No. CONF-9605265-


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