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Author Reynolds, D. C. ♦ Look, D. C. ♦ Jogai, B. ♦ Molnar, R. J.
Sponsorship (US)
Source United States Department of Energy Office of Scientific and Technical Information
Content type Text
Publisher The American Physical Society
Language English
Subject Keyword PHYSICS OF ELEMENTARY PARTICLES AND FIELDS ♦ EXCITED STATES ♦ EXCITONS ♦ PHOTOLUMINESCENCE ♦ PHYSICS ♦ REPLICAS
Abstract Two low-temperature photoluminescence lines in GaN, in the region of energies commonly interpreted as longitudinal optical-phonon replicas of free excitons, donor-bound excitons, or acceptor-bound excitons, are reinterpreted as acceptor-bound excitons (A{sup 0}X{close_quote}s) collapsing to n=2 and n=3 excited states, respectively, of the acceptors involved. Application of this model to two sets of A{sup 0}X-related lines in hydride-vapor-phase-grown GaN gives acceptor energies of 85{+-}1, and 115{+-}1 meV, respectively. The existence of such shallow acceptor states, if confirmed, is of great technological importance. {copyright} 2001 American Institute of Physics.
ISSN 00218979
Educational Use Research
Learning Resource Type Article
Publisher Date 2001-06-01
Publisher Place United States
Journal Journal of Applied Physics
Volume Number 89
Issue Number 11


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