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Author Llobet, Jordi ♦ Pérez-Murano, Francesc ♦ Krali, Emiljana ♦ Wang, Chen ♦ Jones, Mervyn E. ♦ Durrani, Zahid A. K. ♦ Arbiol, Jordi
Source United States Department of Energy Office of Scientific and Technical Information
Content type Text
Language English
Subject Keyword CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY ♦ CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS ♦ DIAMONDS ♦ ETCHING ♦ EXCITED STATES ♦ FABRICATION ♦ GALLIUM IONS ♦ NANOWIRES ♦ PHONONS ♦ QUANTUM DOTS ♦ RAMAN SPECTROSCOPY ♦ SILICON ♦ TRANSISTORS ♦ TUNNEL EFFECT
Abstract Suspended silicon nanowires have significant potential for a broad spectrum of device applications. A suspended p-type Si nanowire incorporating Si nanocrystal quantum dots has been used to form a single-hole transistor. Transistor fabrication uses a novel and rapid process, based on focused gallium ion beam exposure and anisotropic wet etching, generating <10 nm nanocrystals inside suspended Si nanowires. Electrical characteristics at 10 K show Coulomb diamonds with charging energy ∼27 meV, associated with a single dominant nanocrystal. Resonant tunnelling features with energy spacing ∼10 meV are observed, parallel to both diamond edges. These may be associated either with excited states or hole–acoustic phonon interactions, in the nanocrystal. In the latter case, the energy spacing corresponds well with reported Raman spectroscopy results and phonon spectra calculations.
ISSN 00036951
Educational Use Research
Learning Resource Type Article
Publisher Date 2015-11-30
Publisher Place United States
Journal Applied Physics Letters
Volume Number 107
Issue Number 22


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