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Author Jiang, L. ♦ Wang, Q. ♦ Schiff, E. A. ♦ Guha, S. ♦ Yang, J. ♦ Deng, X.
Source United States Department of Energy Office of Scientific and Technical Information
Content type Text
Language English
Subject Keyword SOLAR ENERGY ♦ SILICON SOLAR CELLS ♦ ELECTRO-OPTICAL EFFECTS ♦ AMORPHOUS STATE ♦ POTENTIALS ♦ HETEROJUNCTIONS ♦ HYDROGENATION ♦ INTERFACES ♦ DIPOLES ♦ HARMONICS ♦ CAPACITANCE ♦ P-I-N JUNCTIONS
Abstract We present a technique for using modulated electroabsorption measurements to determine the built-in potential in semiconductor heterojunction devices. The technique exploits a simple relationship between the second-harmonic electroabsorption signal and the capacitance of such devices. We apply this technique to hydrogenated amorphous silicon ({ital a}-Si:H)-based solar cells incorporating microcrystalline Si {ital p}{sup +} layers. For one set of cells with a conventional plasma-deposited intrinsic ({ital i}) layer we obtain a built-in potential of 0.98{plus_minus}0.04 V; for cells with an {ital i} layer deposited using strong hydrogen dilution we obtain 1.25{plus_minus}0.04 V. We speculate that interface dipoles between the {ital p}{sup +} and {ital i} layers significantly influence the built-in potential. {copyright} {ital 1996 American Institute of Physics.}
ISSN 00036951
Educational Use Research
Learning Resource Type Article
Publisher Date 1996-11-01
Publisher Place United States
Journal Applied Physics Letters
Volume Number 69
Issue Number 20


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