Thumbnail
Access Restriction
Open

Author Lake, M. L. ♦ Ting, J. ♦ Lagounov, A. ♦ Tang, C.
Source United States Department of Energy Office of Scientific and Technical Information
Content type Text
Language English
Subject Keyword MATERIALS SCIENCE ♦ DIAMONDS ♦ VAPOR DEPOSITED COATINGS ♦ THIN FILMS ♦ CRYSTAL GROWTH ♦ THERMAL CONDUCTIVITY ♦ COPPER ♦ SUBSTRATES ♦ DEPOSITION ♦ ION BEAMS ♦ METALLIZATION
Abstract The objective of this research was to investigate methods of combining chemical vapor deposition diamond growth techniques with state-of-the-art physical vapor deposition or ion beam enhanced deposition to produce buried metallization of polycrystalline diamond films. The mechanical and electrical integrity of both the insulating and conducting elements following metallization and diamond overgrowth was shown. Both methods were shown to have bonding strength sufficient to withstand tape lift-off, which is regarded to be a good indication of strength needed for die attachment and wire bonding. Diamond overgrowth was also shown, thus enabling buried metallized layers to be created. Electrical resistivity property measurements on metallized layers and between metallization separated by diamond films were shown to be sufficient to allow the use of diamond as an insulating inter-layer material for multi-layer circuit boards. {copyright} {ital 1996 American Institute of Physics.}
ISSN 0094243X
Educational Use Research
Learning Resource Type Article
Publisher Date 1996-03-01
Publisher Place United States
Volume Number 361
Issue Number 1
Technical Publication No. CONF-960109-


Open content in new tab

   Open content in new tab