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Author Chatterjee, Subho ♦ Salahuddin, Sayeef ♦ Kumar, Satish ♦ Mukhopadhyay, Saibal
Source ACM Digital Library
Content type Text
Publisher Association for Computing Machinery (ACM)
File Format PDF
Copyright Year ©2013
Language English
Subject Domain (in DDC) Computer science, information & general works ♦ Data processing & computer science
Abstract Spin Transfer Torque RAM (STTRAM) is a promising candidate for fast, scalable, high-density, nonvolatile memory in nanometer technology. However, relatively high write current density and small volume of the memory device indicate the possibility of significant self-heating in the STTRAM structure. This article performs a critical analysis of the self-heating induced temperature variations in STTRAM. We perform a 3D finite volume method based study to characterize self-heating effect in a single cell. The analysis is extended for STTRAM arrays by developing a computationally efficient RC compact model based thermal analyzer. The analysis shows that self-heating can results in considerable increase in both steady-state value and transient change in temperature of individual cells. The effect is less pronounced at the array level and depends on the activity level, that is, number of active cells within an array size. The analysis further illustrates that self-heating negatively impacts electrical reliability metrics namely, read margin and detection accuracy; degrades cell performance; and modulates energy dissipation.
ISSN 15504832
Age Range 18 to 22 years ♦ above 22 year
Educational Use Research
Education Level UG and PG
Learning Resource Type Article
Publisher Date 2013-05-01
Publisher Place New York
e-ISSN 15504840
Journal ACM Journal on Emerging Technologies in Computing Systems (JETC)
Volume Number 9
Issue Number 2
Page Count 17
Starting Page 1
Ending Page 17

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Source: ACM Digital Library